Principal Investigator Eugene Fitzgerald
Co-investigators Tonio Buonassisi , Jurgen Michel , Evelyn Wang , Carl Thompson , Yang Shao-Horn , Tomas Palacios , Li-Shiuan Peh
The goals of the projects in this theme are oriented towards creating the state-of-the-art III-V devices on silicon and using that progress to combine III-V devices with silicon CMOS in a monolithic process flow. The materials to be explored are GaN, GaAsP/InGaP, and InGaAs HEMTs as well as LEDs built in those same materials systems.