Nanoelectromechanical Memories and Switches

Nanoelectromechanical switches (NEMS) exhibit minimal leakage current in the off state because of both low subthreshold leakage current and gate leakage current. Consequently, they may find application in low power electronics. This work focuses on the fabrication of a double layer graphene switch. We demonstrate an electromechanical switch comprising two polycrystalline graphene films, each deposited using ambient pressure chemical vapor deposition (CVD). Large area graphene sheets facilitate the use of straight forward “top-down” fabrication of electromechanical switches. The top film is pulled into electrical contact with the bottom film by application of approximately 5V between the layers. Contact is broken by mechanical restoring forces after bias is removed. The device switches several times before tearing. Demonstration of multiple switching at low voltage and large on currents confirms that graphene is an attractive material for electromechanical switches. Reliability may be improved by scaling the device area to within one crystalline domain of the graphene films.